MMIX4G20N250

new-10%

Manufacturer part number:MMIX4G20N250

Manufacturer:IXYS

Description:IGBT H BRIDGE 2500V 23A 24SMPD

Case Package:SOT-23

Datasheet:MMIX4G20N250 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	24-SMD Module, 9 Leads
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	2012
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	9
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	100W
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	9
JESD-30 Code	R-PDSO-G9
Number of Elements	4
Configuration	Half Bridge
Case Connection	ISOLATED
Power - Max	100W
Transistor Application	GENERAL PURPOSE SWITCHING
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	3.1V
Max Collector Current	23A
Current - Collector Cutoff (Max)	10μA
Collector Emitter Breakdown Voltage	2.5kV
Voltage - Collector Emitter Breakdown (Max)	2500V
Turn On Time	217 ns
Vce(on) (Max) @ Vge, Ic	3.1V @ 15V, 20A
Turn Off Time-Nom (toff)	1066 ns
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	1190pF @ 15V
RoHS Status	ROHS3 Compliant