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MUBW30-12A6

MUBW30-12A6

MUBW30-12A6

IXYS

IGBT MODULE 1200V 31A 104W E1

SOT-23

MUBW30-12A6 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case E1
Number of Pins 25
Transistor Element Material SILICON
Operating Temperature -40°C~125°C TJ
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
Terminal Finish Matte Tin (Sn)
Additional Feature FAST
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 104W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MUBW
Pin Count 25
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter with Brake
Case Connection ISOLATED
Power - Max 104W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 31A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 1nF
Turn On Time 150 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 15A
Turn Off Time-Nom (toff) 730 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 1nF @ 25V
RoHS Status RoHS Compliant

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