IFS200V12PT4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
IFS200V12PT4BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
150°C TJ
Published
2012
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Configuration
Three Phase Inverter
Input
Standard
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
200A
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 200A
NTC Thermistor
Yes
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
6
$482.23167
$2893.39002
IFS200V12PT4BOSA1 Product Details
IFS200V12PT4BOSA1 Description
IFS200V12PT4BOSA1 is a 1200v isolated IGBT driver. The transistor IFS200V12PT4BOSA1 can be applied in industrial drives, UPS, solar inverters, and auxiliary inverters applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor IFS200V12PT4BOSA1 is in the tray package with 419g weight.
IFS200V12PT4BOSA1 Features
IGBT continuous DC collector current: 200A
IGBT collector-emitter voltage Tvj=25°C: 1200V
Operating junction temperature: 150°C
IGBT driver positive supply Voltage: 15V
Logic power supply Current @ fsw = 20kHz, ULS = +5V: 55mA