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IFS200V12PT4BOSA1

IFS200V12PT4BOSA1

IFS200V12PT4BOSA1

Infineon Technologies

IFS200V12PT4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

IFS200V12PT4BOSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature 150°C TJ
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration Three Phase Inverter
Input Standard
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 200A
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
NTC Thermistor Yes
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
6 $482.23167 $2893.39002
IFS200V12PT4BOSA1 Product Details

IFS200V12PT4BOSA1 Description


IFS200V12PT4BOSA1 is a 1200v isolated IGBT driver. The transistor IFS200V12PT4BOSA1 can be applied in industrial drives, UPS, solar inverters, and auxiliary inverters applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor IFS200V12PT4BOSA1 is in the tray package with 419g weight.



IFS200V12PT4BOSA1 Features


IGBT continuous DC collector current: 200A

IGBT collector-emitter voltage Tvj=25°C: 1200V

Operating junction temperature: 150°C

IGBT driver positive supply Voltage: 15V

Logic power supply Current @ fsw = 20kHz, ULS = +5V: 55mA



IFS200V12PT4BOSA1 Applications


Industrial drives

UPS

Solar Inverters

Auxiliary inverters


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