MWI100-12A8

new-10%

Manufacturer part number:MWI100-12A8

Manufacturer:IXYS

Description:MOD IGBT SIXPACK RBSOA 1200V E3

Case Package:SOT-23

Datasheet:MWI100-12A8 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	E3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C TJ
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	19
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	640W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Base Part Number	MWI
Pin Count	19
JESD-30 Code	R-XUFM-X19
Number of Elements	6
Configuration	Three Phase Inverter
Case Connection	ISOLATED
Power - Max	640W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.6V
Max Collector Current	160A
Current - Collector Cutoff (Max)	6.3mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	6.5nF
Turn On Time	160 ns
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 100A
Turn Off Time-Nom (toff)	690 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	6.5nF @ 25V
RoHS Status	ROHS3 Compliant