MWI75-12T8T

new-10%

Manufacturer part number:MWI75-12T8T

Manufacturer:IXYS

Description:IGBT MODULE 1200V 110A 360W E3

Case Package:SOT-23

Datasheet:MWI75-12T8T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	32 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	E3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C TJ
Published	2010
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	21
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	360W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	MWI
Pin Count	35
JESD-30 Code	R-XUFM-X21
Qualification Status	Not Qualified
Number of Elements	6
Configuration	Three Phase Inverter
Case Connection	ISOLATED
Power - Max	360W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	110A
Current - Collector Cutoff (Max)	3mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	5.35nF
Turn On Time	320 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 75A
Turn Off Time-Nom (toff)	740 ns
IGBT Type	Trench
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	5.35nF @ 25V
RoHS Status	ROHS3 Compliant