APTGT100DA120D1G

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Manufacturer part number:APTGT100DA120D1G

Manufacturer:Microsemi Corporation

Description:IGBT MODULE 1200V 150A 520W D1

Case Package:SOT-23

Datasheet:APTGT100DA120D1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	D1
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Published	2010
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Terminal Finish	TIN SILVER COPPER
Max Power Dissipation	520W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	7
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	520W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	150A
Current - Collector Cutoff (Max)	3mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	7nF
Turn On Time	400 ns
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 100A
Turn Off Time-Nom (toff)	830 ns
IGBT Type	Trench Field Stop
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	7nF @ 25V
RoHS Status	RoHS Compliant