DM2G200SH12AE

new-10%

Manufacturer part number:DM2G200SH12AE

Manufacturer:MagnaChip Semiconductor

Description:DM2G200SH12AE datasheet pdf and Transistors - IGBTs - Modules product details from MagnaChip Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:DM2G200SH12AE Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
ECCN (US)	EAR99
Maximum Collector-Emitter Voltage (V)	1200
Typical Collector Emitter Saturation Voltage (V)	1.8
Maximum Gate Emitter Voltage (V)	±20
Maximum Power Dissipation (mW)	1350000
Maximum Continuous Collector Current (A)	275
Maximum Gate Emitter Leakage Current (uA)	0.3
Minimum Operating Temperature (°C)	-40
Maximum Operating Temperature (°C)	150
Supplier Package	Case 7DM-2
Military	No
Mounting	Screw
Package Height	29.95(Max)
Package Length	94
Package Width	48
PCB changed	7
Part Status	Obsolete
Pin Count	7
Configuration	Dual
Channel Type	N
RoHS Status	Supplier Unconfirmed