2N4124-AP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available on our website
SOT-23
2N4124-AP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
625MW
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
200mA
Transition Frequency
300MHz
Frequency - Transition
300MHz
Power Dissipation-Max (Abs)
1.5W
RoHS Status
ROHS3 Compliant
2N4124-AP Product Details
2N4124-AP Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).300MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 25V.
2N4124-AP Features
the DC current gain for this device is 120 @ 2mA 1V the vce saturation(Max) is 300mV @ 5mA, 50mA a transition frequency of 300MHz
2N4124-AP Applications
There are a lot of Micro Commercial Co 2N4124-AP applications of single BJT transistors.