MMS8050-H-TP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Micro Commercial Co stock available on our website
SOT-23
MMS8050-H-TP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
10
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
300mW
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 50mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
150MHz
Frequency - Transition
150MHz
Power Dissipation-Max (Abs)
0.3W
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.019354
$0.019354
500
$0.014231
$7.1155
1000
$0.011859
$11.859
2000
$0.010880
$21.76
5000
$0.010168
$50.84
10000
$0.009459
$94.59
15000
$0.009148
$137.22
50000
$0.008995
$449.75
MMS8050-H-TP Product Details
MMS8050-H-TP Overview
In this device, the DC current gain is 120 @ 50mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 50mA, 500mA.In this part, there is a transition frequency of 150MHz.Single BJT transistor shows a 25V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
MMS8050-H-TP Features
the DC current gain for this device is 120 @ 50mA 1V the vce saturation(Max) is 600mV @ 50mA, 500mA a transition frequency of 150MHz
MMS8050-H-TP Applications
There are a lot of Micro Commercial Co MMS8050-H-TP applications of single BJT transistors.