2N6661

new-10%

Manufacturer part number:2N6661

Manufacturer:Microchip Technology

Description:MOSFET N-CH 90V 350MA 3TO-39

Case Package:SOT-23

Datasheet:2N6661 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Gold
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Number of Pins	3
Supplier Device Package	TO-39
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2010
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	6.25W Tc
Element Configuration	Single
Power Dissipation	6.25W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 24V
Current - Continuous Drain (Id) @ 25°C	350mA Tj
Drain to Source Voltage (Vdss)	90V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	350mA
Threshold Voltage	800mV
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	90V
Input Capacitance	50pF
Drain to Source Resistance	4Ohm
Rds On Max	4 Ω
Ambient Temperature Range High	150°C
Height	6.604mm
RoHS Status	Non-RoHS Compliant