TN0104N3-G-P003

new-10%

Manufacturer part number:TN0104N3-G-P003

Manufacturer:Microchip Technology

Description:MOSFET,N-CHANNEL ENHANCEMENT-MODE,40V,1.8 Ohm3 TO-92T/R

Case Package:SOT-23

Datasheet:TN0104N3-G-P003 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Weight	453.59237mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	O-PBCY-T3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.8 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	1.6V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds	70pF @ 20V
Current - Continuous Drain (Id) @ 25°C	450mA Ta
Rise Time	7ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	3V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	6 ns
Continuous Drain Current (ID)	450mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.45A
DS Breakdown Voltage-Min	40V
Height	5.33mm
Length	5.21mm
Width	4.19mm
RoHS Status	ROHS3 Compliant