TP2424N8-G

new-10%

Manufacturer part number:TP2424N8-G

Manufacturer:Microchip Technology

Description:MOSFET P-CH 240V 0.316A SOT89-3

Case Package:SOT-23

Datasheet:TP2424N8-G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-243AA
Number of Pins	4
Weight	52.786812mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Technology	MOSFET (Metal Oxide)
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
JESD-30 Code	R-PSSO-F3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.6W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.6W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	316mA Tj
Rise Time	30ns
Drain to Source Voltage (Vdss)	240V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	316mA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	8Ohm
Drain to Source Breakdown Voltage	-240V
Height	1.6mm
Length	4.6mm
Width	2.6mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant