TP2522N8-G

new-10%

Manufacturer part number:TP2522N8-G

Manufacturer:Microchip Technology

Description:MOSFET P-CH 220V 0.26A SOT89-3

Case Package:SOT-23

Datasheet:TP2522N8-G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-243AA
Number of Pins	4
Weight	52.786812mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	12Ohm
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
JESD-30 Code	R-PSSO-F3
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.6W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.6W
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	125pF @ 25V
Current - Continuous Drain (Id) @ 25°C	260mA Tj
Rise Time	15ns
Drain to Source Voltage (Vdss)	220V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	-260mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.26A
Drain to Source Breakdown Voltage	-220V
Pulsed Drain Current-Max (IDM)	2A
Height	1.6mm
Length	4.6mm
Width	2.6mm
RoHS Status	ROHS3 Compliant