VP0550N3-G-P013

new-10%

Manufacturer part number:VP0550N3-G-P013

Manufacturer:Microchip Technology

Description:MOSFET,P-CHANNEL ENHANCEMENT-MODE,-500V,125 Ohm3 TO-92AMMO

Case Package:SOT-23

Datasheet:VP0550N3-G-P013 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Weight	453.59237mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Box (TB)
Published	2013
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
JESD-30 Code	O-PBCY-T3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	10 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	125 Ω @ 10mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	70pF @ 25V
Current - Continuous Drain (Id) @ 25°C	54mA Tj
Rise Time	15ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	54mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.054A
Drain to Source Breakdown Voltage	-500V
Height	5.33mm
Length	5.21mm
Width	4.19mm
RoHS Status	ROHS3 Compliant