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MT29E3T08EUHBBM4-3ES:B TR

MT29E3T08EUHBBM4-3ES:B TR

MT29E3T08EUHBBM4-3ES:B TR

Micron Technology Inc.

Memory IC

SOT-23

MT29E3T08EUHBBM4-3ES:B TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Operating Temperature 0°C~70°C TA
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology FLASH - NAND
Voltage - Supply 2.5V~3.6V
Memory Size 3Tb 384G x 8
Memory Type Non-Volatile
Clock Frequency 333MHz
Memory Format FLASH
Memory Interface Parallel
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $152.35200 $152.352
MT29E3T08EUHBBM4-3ES:B TR Product Details

MT29E3T08EUHBBM4-3ES:B TR Overview


There is a memory type Non-Volatile for this type of device. It comes in a Tape & Reel (TR). The memory size of the chip is 3Tb 384G x 8 Mb. The device uses a mainstream FLASH-format memory. Due to its wide temperature range of 0°C~70°C TA, this device is well suited to a wide range of applications that require high performance. The device is capable of handling a supply voltage of 2.5V~3.6V. During the rotation of the clock, the ic memory chip is set as 333MHz.

MT29E3T08EUHBBM4-3ES:B TR Features



MT29E3T08EUHBBM4-3ES:B TR Applications


There are a lot of Micron Technology Inc. MT29E3T08EUHBBM4-3ES:B TR Memory applications.

  • Cache memory
  • mainframes
  • nonvolatile BIOS memory
  • main computer memory
  • cell phones
  • graphics card
  • data buffer
  • embedded logic
  • eSRAM
  • Camcorders

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