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1N5809E3/TR

1N5809E3/TR

1N5809E3/TR

Microsemi

SOT-23

1N5809E3/TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 110
Peak Reverse Repetitive Voltage (V) 100
Maximum Continuous Forward Current (A) 6
Peak Non-Repetitive Surge Current (A) 125
Peak Forward Voltage (V) 0.875@4A
Peak Reverse Current (uA) 5
Peak Reverse Recovery Time (ns) 30
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Commercial
Supplier Package Case B
Military No
Mounting Through Hole
Package Length 7.62(Max)
PCB changed 2
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
Diameter 3.61(Max)
RoHS Status Yes with exemptions
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.26000 $7.26
500 $7.1874 $3593.7
1000 $7.1148 $7114.8
1500 $7.0422 $10563.3
2000 $6.9696 $13939.2
2500 $6.897 $17242.5
1N5809E3/TR Product Details

1N5809E3/TR Overview


Datasheets indicate 0.875@4A as the peak forward voltage.RF diode consumes about 6 continuous forward current at any given time.RF diode must be operated wRF diodeh a DC reverse voltage less than 110 V.

1N5809E3/TR Features


the forward peak voltage is 0.875@4A


1N5809E3/TR Applications


There are a lot of Microsemi
1N5809E3/TR applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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