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BAP64-06W,115

BAP64-06W,115

BAP64-06W,115

NXP USA Inc.

PIN - 1 Pair Common Anode 0.35pF @ 20V 1MHz -65°C~150°C TJ 3 Terminations SILICON 260 DUAL Tape & Reel (TR) SC-70, SOT-323

SOT-23

BAP64-06W,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Package / Case SC-70, SOT-323
Surface Mount YES
Diode Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.10.00.70
Subcategory PIN Diodes
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP64-06
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 2
Configuration COMMON ANODE, 2 ELEMENTS
Power Dissipation-Max 240mW
Diode Type PIN - 1 Pair Common Anode
Application ATTENUATOR; SWITCHING
Current - Max 100mA
Capacitance @ Vr, F 0.35pF @ 20V 1MHz
Voltage - Peak Reverse (Max) 100V
Breakdown Voltage-Min 100V
Reverse Test Voltage 1V
Frequency Band S B
Diode Capacitance-Nom 0.37pF
Resistance @ If, F 1.35Ohm @ 100mA 100MHz
Diode Capacitance-Max 0.35pF
Minority Carrier Lifetime-Nom 1.55 µs
Diode Res Test Current 0.5mA
Diode Res Test Frequency 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.09900 $0.297
BAP64-06W,115 Product Details

BAP64-06W,115 Overview


A maximum current of 100mA is required to operate this device.This device operates at a maximum peak reverse voltage of 100V according to its specifications.The breakdown voltage of this device may occasionally be as low as 100V.In order to obtain a valid conversion result, the reverse test voltage must be within 1V.

BAP64-06W,115 Features


from a maximum current of 100mA volts
at its lowest breakdown voltage of 100V


BAP64-06W,115 Applications


There are a lot of NXP USA Inc.
BAP64-06W,115 applications of RF diodes.


  • Telematic systems
  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering

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