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JANS1N5550US

JANS1N5550US

JANS1N5550US

Microsemi

Waffle

SOT-23

JANS1N5550US Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 220
Peak Reverse Repetitive Voltage (V) 200
Maximum Continuous Forward Current (A) 5
Peak Non-Repetitive Surge Current (A) 100
Peak Forward Voltage (V) 1.2@9A
Peak Reverse Current (uA) 1
Peak Reverse Recovery Time (ns) 2000
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
Standard Package Name MELF
Supplier Package B-MELF
Mounting Surface Mount
Package Height 2.16(Max)
Package Length 4.95(Max)
Package Width 2.16(Max)
PCB changed 2
Packaging Waffle
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
RoHS Status RoHS non-compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $91.80000 $91.8
500 $90.882 $45441
1000 $89.964 $89964
1500 $89.046 $133569
2000 $88.128 $176256
2500 $87.21 $218025
JANS1N5550US Product Details

JANS1N5550US Overview


In the datasheets, 1.2@9A is stated as the peak forward voltage.A continuous forward current of 5 is the maximum consumption of this device.RF diode is necessary to operate the device at a DC reverse voltage below 220.

JANS1N5550US Features


the forward peak voltage is 1.2@9A


JANS1N5550US Applications


There are a lot of Microsemi
JANS1N5550US applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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