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MX1N6626US

MX1N6626US

MX1N6626US

Microsemi

SOT-23

MX1N6626US Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 220
Peak Reverse Repetitive Voltage (V) 200
Maximum Continuous Forward Current (A) 1.75
Peak Non-Repetitive Surge Current (A) 75
Peak Forward Voltage (V) 1.5@4A
Peak Reverse Current (uA) 2
Peak Reverse Recovery Time (ns) 45
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Military
AEC Qualified No
Standard Package Name MELF
Supplier Package E-MELF
Military No
Mounting Surface Mount
Package Height 3.76(Max)
Package Length 5.72(Max)
Package Width 3.76(Max)
PCB changed 2
Lead Shape No Lead
Type Switching Diode
Pin Count2
Configuration Single
RoHS StatusRoHS non-compliant
In-Stock:1820 items

MX1N6626US Product Details

MX1N6626US Overview


Datasheets indicate 1.5@4A as the peak forward voltage.RF diode consumes about 1.75 continuous forward current at any given time.RF diode must be operated wRF diodeh a DC reverse voltage less than 220 V.

MX1N6626US Features


the forward peak voltage is 1.5@4A


MX1N6626US Applications


There are a lot of Microsemi
MX1N6626US applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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