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W3H128M72E-667NBM

W3H128M72E-667NBM

W3H128M72E-667NBM

Microsemi

W3H128M72E-667NBM datasheet pdf and Memory Cards product details from Microsemi stock available on our website

SOT-23

W3H128M72E-667NBM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount YES
Number of Terminals 208
ECCN (US) 4A994.a
Module DRAM Module
Module Density 1Gbyte
Number of Chip per Module 5
Chip Density (bit) 1.8G
Data Bus Width (bit) 72
Max. Access Time (ns) 1.25
Maximum Clock Rate (MHz) 667
Chip Package Type PBGA
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.9
Operating Current (mA) 1375
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
Supplier Temperature Grade Military
ECC Support Yes
Number of Chip Banks 8
CAS Latency 6
SPD EEPROM Support No
Supplier Package BGA
Mounting Surface Mount
Package Height 3.94(Max)
Package Length 22.1(Max)
Package Width 16.1(Max)
PCB changed 208
Number of Words 134217728 words
Package Shape RECTANGULAR
Manufacturer Microsemi Corporation
ECCN Code EAR99
Additional Feature AUTO/SELF REFRESH
HTS Code 8542.32.00.36
Technology CMOS
Terminal Position BOTTOM
Terminal Form BALL
Number of Functions 1
Terminal Pitch 1 mm
Reach Compliance Code compliant
Pin Count 208
JESD-30 Code R-PBGA-B208
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 1.9 V
Temperature Grade MILITARY
Supply Voltage-Min (Vsup) 1.7 V
Number of Ports 1
Operating Mode SYNCHRONOUS
Organization 128Mx72
Memory Width 72
Memory Density 9663676416 bit
PLL No
Memory IC Type DDR DRAM
Access Mode MULTI BANK PAGE BURST
Self Refresh Yes
RoHS Status Supplier Unconfirmed

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