1N5186US

new-10%

Manufacturer part number:1N5186US

Manufacturer:Microsemi Corporation

Description:DIODE GEN PURP 100V 3A AXIAL

Case Package:SOT-23

Datasheet:1N5186US Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount, Through Hole
Mounting Type	Through Hole
Package / Case	B, Axial
Number of Pins	2
Diode Element Material	SILICON
Packaging	Bulk
Published	1997
JESD-609 Code	e0
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	TIN LEAD
Max Operating Temperature	175°C
Min Operating Temperature	-65°C
Additional Feature	HIGH RELIABILITY, HIGH SURGE CAPABILITY
HTS Code	8541.10.00.80
Subcategory	Rectifier Diodes
Terminal Position	END
Terminal Form	WRAP AROUND
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	2μA @ 100V
Voltage - Forward (Vf) (Max) @ If	1.5V @ 9A
Case Connection	ISOLATED
Forward Current	3A
Operating Temperature - Junction	-65°C~175°C
Output Current-Max	3A
Max Reverse Voltage (DC)	100V
Average Rectified Current	3A
Number of Phases	1
Reverse Recovery Time	150 ns
Peak Reverse Current	2μA
Max Repetitive Reverse Voltage (Vrrm)	100V
Peak Non-Repetitive Surge Current	80A
Radiation Hardening	Yes
RoHS Status	Non-RoHS Compliant