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1N5186US

1N5186US

1N5186US

Microsemi Corporation

DIODE GEN PURP 100V 3A AXIAL

SOT-23

1N5186US Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mount Surface Mount, Through Hole
Mounting Type Through Hole
Package / Case B, Axial
Number of Pins 2
Diode Element Material SILICON
Packaging Bulk
Published 1997
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY, HIGH SURGE CAPABILITY
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position END
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 2μA @ 100V
Voltage - Forward (Vf) (Max) @ If 1.5V @ 9A
Case Connection ISOLATED
Forward Current 3A
Operating Temperature - Junction -65°C~175°C
Output Current-Max 3A
Max Reverse Voltage (DC) 100V
Average Rectified Current 3A
Number of Phases 1
Reverse Recovery Time 150 ns
Peak Reverse Current 2μA
Max Repetitive Reverse Voltage (Vrrm) 100V
Peak Non-Repetitive Surge Current 80A
Radiation Hardening Yes
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
103 $9.06505 $933.70015

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