2N1485 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N1485 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Package / Case
TO-8
Number of Pins
3
Packaging
Bulk
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.75W
Terminal Position
BOTTOM
Terminal Form
WIRE
Number of Elements
1
Polarity
NPN
Configuration
SINGLE
Power Dissipation
1.75W
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
3A
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
12V
DC Current Gain-Min (hFE)
35
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$46.02150
$4602.15
2N1485 Product Details
2N1485 Overview
Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.The maximum collector current is 3A volts.
2N1485 Features
the emitter base voltage is kept at 12V
2N1485 Applications
There are a lot of Microsemi Corporation 2N1485 applications of single BJT transistors.
