JAN2N6251 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JAN2N6251 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/510
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
HTS Code
8541.29.00.95
Max Power Dissipation
6W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Pin Count
2
Reference Standard
MIL-19500/510
JESD-30 Code
O-MBFM-P2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
5.5W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
350V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
6 @ 10A 3V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-204AA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1.67A, 10A
Current - Collector (Ic) (Max)
10A
Collector Base Voltage (VCBO)
450V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$191.10000
$191.1
500
$189.189
$94594.5
1000
$187.278
$187278
1500
$185.367
$278050.5
2000
$183.456
$366912
2500
$181.545
$453862.5
JAN2N6251 Product Details
JAN2N6251 Overview
This device has a DC current gain of 6 @ 10A 3V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 1.67A, 10A.During maximum operation, collector current can be as low as 10A volts.
JAN2N6251 Features
the DC current gain for this device is 6 @ 10A 3V the vce saturation(Max) is 1.5V @ 1.67A, 10A
JAN2N6251 Applications
There are a lot of Microsemi Corporation JAN2N6251 applications of single BJT transistors.