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2N2432A

2N2432A

2N2432A

Microsemi Corporation

2N2432A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N2432A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~175°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power - Max 300mW
Transistor Application CHOPPER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1mA 5V
Current - Collector Cutoff (Max) 10nA
Voltage - Collector Emitter Breakdown (Max) 30V
Transition Frequency 20MHz
Collector Base Voltage (VCBO) 45V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
2N2432A Product Details

2N2432A Overview


This device has a DC current gain of 80 @ 1mA 5V, which is the ratio between the collector current and the base current.Parts of this part have transition frequencies of 20MHz.The device has a 30V maximal voltage - Collector Emitter Breakdown.Maximum collector currents can be below 100mA volts.

2N2432A Features


the DC current gain for this device is 80 @ 1mA 5V
a transition frequency of 20MHz

2N2432A Applications


There are a lot of Microsemi Corporation 2N2432A applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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