2N2432A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N2432A Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~175°C TJ
Packaging
Bulk
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power - Max
300mW
Transistor Application
CHOPPER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1mA 5V
Current - Collector Cutoff (Max)
10nA
Voltage - Collector Emitter Breakdown (Max)
30V
Transition Frequency
20MHz
Collector Base Voltage (VCBO)
45V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
2N2432A Product Details
2N2432A Overview
This device has a DC current gain of 80 @ 1mA 5V, which is the ratio between the collector current and the base current.Parts of this part have transition frequencies of 20MHz.The device has a 30V maximal voltage - Collector Emitter Breakdown.Maximum collector currents can be below 100mA volts.
2N2432A Features
the DC current gain for this device is 80 @ 1mA 5V a transition frequency of 20MHz
2N2432A Applications
There are a lot of Microsemi Corporation 2N2432A applications of single BJT transistors.