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JAN2N6211

JAN2N6211

JAN2N6211

Microsemi Corporation

JAN2N6211 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N6211 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-213AA, TO-66-2
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Series Military, MIL-PRF-19500/461
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Max Power Dissipation 3W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Pin Count 3
Reference Standard MIL-19500/461E
JESD-30 Code O-MBFM-P2
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 225V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 1A 5V
Current - Collector Cutoff (Max) 5mA
Vce Saturation (Max) @ Ib, Ic 1.4V @ 125mA, 1A
Current - Collector (Ic) (Max) 2A
Collector Base Voltage (VCBO) 275V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
JAN2N6211 Product Details

JAN2N6211 Overview


This device has a DC current gain of 30 @ 1A 5V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.4V @ 125mA, 1A.Maximum collector currents can be below 2A volts.

JAN2N6211 Features


the DC current gain for this device is 30 @ 1A 5V
the vce saturation(Max) is 1.4V @ 125mA, 1A

JAN2N6211 Applications


There are a lot of Microsemi Corporation JAN2N6211 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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