2N3439L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N3439L Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
JESD-609 Code
e0
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Max Power Dissipation
800mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
800mW
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 20mA 10V
Current - Collector Cutoff (Max)
2μA
Vce Saturation (Max) @ Ib, Ic
500mV @ 4mA, 50mA
Collector Emitter Breakdown Voltage
350V
Collector Base Voltage (VCBO)
450V
Emitter Base Voltage (VEBO)
7V
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$17.52870
$1752.87
2N3439L Product Details
2N3439L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 20mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 4mA, 50mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.The maximum collector current is 1A volts.
2N3439L Features
the DC current gain for this device is 40 @ 20mA 10V the vce saturation(Max) is 500mV @ 4mA, 50mA the emitter base voltage is kept at 7V
2N3439L Applications
There are a lot of Microsemi Corporation 2N3439L applications of single BJT transistors.