2N3467 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N3467 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Package / Case
TO-39
Number of Pins
3
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
2
Number of Elements
1
Polarity
PNP
Configuration
SINGLE
Power Dissipation
1W
Transistor Application
SWITCHING
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
1A
JEDEC-95 Code
TO-205AD
Transition Frequency
175MHz
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
DC Current Gain-Min (hFE)
40
Turn Off Time-Max (toff)
90ns
Turn On Time-Max (ton)
40ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.42000
$3.42
10
$3.04900
$30.49
25
$2.74440
$68.61
100
$2.50030
$250.03
250
$2.25640
$564.1
500
$2.02466
$1012.33
1,000
$1.70755
$1.70755
2,500
$1.62624
$3.25248
2N3467 Product Details
2N3467 Overview
Keeping the emitter base voltage at 5V allows for a high level of efficiency.A transition frequency of 175MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2N3467 Features
the emitter base voltage is kept at 5V a transition frequency of 175MHz
2N3467 Applications
There are a lot of Microsemi Corporation 2N3467 applications of single BJT transistors.