2N3501 Overview

In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 15mA, 150mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.This product comes in a TO-39 (TO-205AD) device package from the supplier.There is a 150V maximal voltage in the device due to collector-emitter breakdown.A maximum collector current of 300mA volts can be achieved.

2N3501 Features

the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
the supplier device package of TO-39 (TO-205AD)

2N3501 Applications

There are a lot of Microsemi Corporation 2N3501 applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting