MJE18008G Overview
In this device, the DC current gain is 14 @ 1A 5V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 900mA, 4.5V.Emitter base voltages of 9V can achieve high levels of efficiency.This device has a current rating of 8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 13MHz.Collector current can be as low as 8A volts at its maximum.
MJE18008G Features
the DC current gain for this device is 14 @ 1A 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 700mV @ 900mA, 4.5V
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 13MHz
MJE18008G Applications
There are a lot of ON Semiconductor MJE18008G applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
