2N3507 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N3507 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Package / Case
TO-39
Number of Pins
3
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
2
Number of Elements
1
Polarity
NPN
Configuration
SINGLE
Power Dissipation
1W
Transistor Application
SWITCHING
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
3A
Transition Frequency
60MHz
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
DC Current Gain-Min (hFE)
20
Turn Off Time-Max (toff)
90ns
Turn On Time-Max (ton)
45ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$24.50340
$2450.34
2N3507 Product Details
2N3507 Overview
An emitter's base voltage can be kept at 5V to gain high efficiency.A transition frequency of 60MHz is present in the part.In extreme cases, the collector current can be as low as 3A volts.
2N3507 Features
the emitter base voltage is kept at 5V a transition frequency of 60MHz
2N3507 Applications
There are a lot of Microsemi Corporation 2N3507 applications of single BJT transistors.