2N3634UB Overview

In this device, the DC current gain is 50 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 50mA.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

2N3634UB Features

the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA

2N3634UB Applications

There are a lot of Microsemi Corporation 2N3634UB applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter