JANTX2N6249 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
JANTX2N6249 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
OBSOLETE (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/510
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
HTS Code
8541.29.00.95
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Reach Compliance Code
unknown
Pin Count
2
Reference Standard
MIL
JESD-30 Code
O-MBFM-P2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
6W
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 10A 3V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-204
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max)
200V
Current - Collector (Ic) (Max)
10A
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
JANTX2N6249 Product Details
JANTX2N6249 Overview
In this device, the DC current gain is 10 @ 10A 3V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Collector Emitter Breakdown occurs at 200VV - Maximum voltage.
JANTX2N6249 Features
the DC current gain for this device is 10 @ 10A 3V the vce saturation(Max) is 1.5V @ 1A, 10A
JANTX2N6249 Applications
There are a lot of Microsemi Corporation JANTX2N6249 applications of single BJT transistors.