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JANTX2N6249

JANTX2N6249

JANTX2N6249

Microsemi Corporation

JANTX2N6249 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N6249 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status OBSOLETE (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/510
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.29.00.95
Terminal Position BOTTOM
Terminal Form PIN/PEG
Reach Compliance Code unknown
Pin Count 2
Reference Standard MIL
JESD-30 Code O-MBFM-P2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 6W
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 10A 3V
Current - Collector Cutoff (Max) 1mA
JEDEC-95 Code TO-204
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 10A
Voltage - Collector Emitter Breakdown (Max) 200V
Current - Collector (Ic) (Max) 10A
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
JANTX2N6249 Product Details

JANTX2N6249 Overview


In this device, the DC current gain is 10 @ 10A 3V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Collector Emitter Breakdown occurs at 200VV - Maximum voltage.

JANTX2N6249 Features


the DC current gain for this device is 10 @ 10A 3V
the vce saturation(Max) is 1.5V @ 1A, 10A

JANTX2N6249 Applications


There are a lot of Microsemi Corporation JANTX2N6249 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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