2N3635 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N3635 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Supplier Device Package
TO-39
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Power - Max
1W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
140V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
140V
Current - Collector (Ic) (Max)
1A
Collector Base Voltage (VCBO)
140V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
2N3635 Product Details
2N3635 Overview
DC current gain in this device equals 100 @ 50mA 10V, which is the ratio of the base current to the collector current.When VCE saturation is 600mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor comes in a supplier device package of TO-39.Detection of Collector Emitter Breakdown at 140V maximal voltage is present.During maximum operation, collector current can be as low as 1A volts.
2N3635 Features
the DC current gain for this device is 100 @ 50mA 10V the vce saturation(Max) is 600mV @ 5mA, 50mA the supplier device package of TO-39
2N3635 Applications
There are a lot of Microsemi Corporation 2N3635 applications of single BJT transistors.