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2N3635

2N3635

2N3635

Microsemi Corporation

2N3635 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N3635 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Supplier Device Package TO-39
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Max Power Dissipation 1W
Power - Max 1W
Transistor Type PNP
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 140V
Current - Collector (Ic) (Max) 1A
Collector Base Voltage (VCBO) 140V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
2N3635 Product Details

2N3635 Overview


DC current gain in this device equals 100 @ 50mA 10V, which is the ratio of the base current to the collector current.When VCE saturation is 600mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor comes in a supplier device package of TO-39.Detection of Collector Emitter Breakdown at 140V maximal voltage is present.During maximum operation, collector current can be as low as 1A volts.

2N3635 Features


the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of TO-39

2N3635 Applications


There are a lot of Microsemi Corporation 2N3635 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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