With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.In order to achieve high efficiency, the continuous collector voltage should be kept at 50mA.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.A transition frequency of 40MHz is present in the part.Collector current can be as low as 50mA volts at its maximum.
2N5087 Features
a collector emitter saturation voltage of 300mV the emitter base voltage is kept at 3V a transition frequency of 40MHz
2N5087 Applications
There are a lot of Central Semiconductor 2N5087 applications of single BJT transistors.