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2N3868

  • 2N3868
  • 2N3868

2N3868

2N3868

Microsemi Corporation

2N3868 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N3868 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Package / Case TO-5
Number of Pins 3
Packaging Bulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 200°C
Min Operating Temperature -55°C
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Number of Elements 1
Polarity PNP
Configuration SINGLE
Power Dissipation 1W
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
Transition Frequency 60MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 4V
DC Current Gain-Min (hFE) 20
Turn Off Time-Max (toff) 600ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $20.85360 $2085.36
2N3868 Product Details

2N3868 Overview


Emitter base voltages of 4V can achieve high levels of efficiency.Parts of this part have transition frequencies of 60MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

2N3868 Features


the emitter base voltage is kept at 4V
a transition frequency of 60MHz

2N3868 Applications


There are a lot of Microsemi Corporation 2N3868 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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