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JANTXV2N5151L

JANTXV2N5151L

JANTXV2N5151L

Microsemi Corporation

JANTXV2N5151L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTXV2N5151L Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
Series Military, MIL-PRF-19500/545
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 2.5A 5V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 5A
Transition Frequency 60MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5.5V
Turn On Time-Max (ton) 500ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $18.99560 $1899.56
JANTXV2N5151L Product Details

JANTXV2N5151L Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 2.5A 5V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 500mA, 5A.An emitter's base voltage can be kept at 5.5V to gain high efficiency.A transition frequency of 60MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

JANTXV2N5151L Features


the DC current gain for this device is 30 @ 2.5A 5V
the vce saturation(Max) is 1.5V @ 500mA, 5A
the emitter base voltage is kept at 5.5V
a transition frequency of 60MHz

JANTXV2N5151L Applications


There are a lot of Microsemi Corporation JANTXV2N5151L applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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