JANTXV2N5151L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTXV2N5151L Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/545
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 2.5A 5V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500mA, 5A
Transition Frequency
60MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5.5V
Turn On Time-Max (ton)
500ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$18.99560
$1899.56
JANTXV2N5151L Product Details
JANTXV2N5151L Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 2.5A 5V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 500mA, 5A.An emitter's base voltage can be kept at 5.5V to gain high efficiency.A transition frequency of 60MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
JANTXV2N5151L Features
the DC current gain for this device is 30 @ 2.5A 5V the vce saturation(Max) is 1.5V @ 500mA, 5A the emitter base voltage is kept at 5.5V a transition frequency of 60MHz
JANTXV2N5151L Applications
There are a lot of Microsemi Corporation JANTXV2N5151L applications of single BJT transistors.