2N4033UB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N4033UB Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-SMD, No Lead
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
Max Power Dissipation
500mW
Terminal Position
DUAL
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
500mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 5V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 1A
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
Turn On Time-Max (ton)
40ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
2N4033UB Product Details
2N4033UB Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is the ratio between the base current and the collector current.When VCE saturation is 1V @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Maximum collector currents can be below 1A volts.
2N4033UB Features
the DC current gain for this device is 100 @ 100mA 5V the vce saturation(Max) is 1V @ 100mA, 1A the emitter base voltage is kept at 5V
2N4033UB Applications
There are a lot of Microsemi Corporation 2N4033UB applications of single BJT transistors.