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2N4033UB

2N4033UB

2N4033UB

Microsemi Corporation

2N4033UB datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N4033UB Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, No Lead
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
JESD-609 Code e0
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Power Dissipation 500mW
Terminal Position DUAL
Pin Count 3
Number of Elements 1
Configuration SINGLE
Power Dissipation 500mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Turn On Time-Max (ton) 40ns
Radiation Hardening No
RoHS Status Non-RoHS Compliant
2N4033UB Product Details

2N4033UB Overview


In this device, the DC current gain is 100 @ 100mA 5V, which is the ratio between the base current and the collector current.When VCE saturation is 1V @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Maximum collector currents can be below 1A volts.

2N4033UB Features


the DC current gain for this device is 100 @ 100mA 5V
the vce saturation(Max) is 1V @ 100mA, 1A
the emitter base voltage is kept at 5V

2N4033UB Applications


There are a lot of Microsemi Corporation 2N4033UB applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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