2N4236 Overview

DC current gain in this device equals 30 @ 250mA 1V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 600mV @ 100mA, 1A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 7V allows for a high level of efficiency.This product comes in a TO-39 (TO-205AD) device package from the supplier.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.In extreme cases, the collector current can be as low as 1A volts.

2N4236 Features

the DC current gain for this device is 30 @ 250mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the supplier device package of TO-39 (TO-205AD)

2N4236 Applications

There are a lot of Microsemi Corporation 2N4236 applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface