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2N4911

2N4911

2N4911

Microsemi Corporation

2N4911 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N4911 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-66
Number of Pins 3
Transistor Element Material SILICON
Packaging Bulk
Published 2001
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Power Dissipation 25W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Pin Count 2
JESD-30 Code O-MBFM-P2
Operating Temperature (Max) 200°C
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation 25W
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 4A
DC Current Gain-Min (hFE) 20
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $19.72550 $1972.55
2N4911 Product Details

2N4911 Overview


Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

2N4911 Features



2N4911 Applications


There are a lot of Microsemi Corporation 2N4911 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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