JANTX2N3635 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N3635 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 4 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2002
Series
Military, MIL-PRF-19500/357
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
2
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
140V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 50mA
Transition Frequency
200MHz
Collector Base Voltage (VCBO)
140V
Emitter Base Voltage (VEBO)
5V
Turn Off Time-Max (toff)
650ns
Turn On Time-Max (ton)
200ns
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$16.328000
$16.328
10
$15.403774
$154.03774
100
$14.531862
$1453.1862
500
$13.709304
$6854.652
1000
$12.933305
$12933.305
JANTX2N3635 Product Details
JANTX2N3635 Overview
This device has a DC current gain of 100 @ 50mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.As you can see, the part has a transition frequency of 200MHz.When collector current reaches its maximum, it can reach 1A volts.
JANTX2N3635 Features
the DC current gain for this device is 100 @ 50mA 10V the vce saturation(Max) is 600mV @ 5mA, 50mA the emitter base voltage is kept at 5V a transition frequency of 200MHz
JANTX2N3635 Applications
There are a lot of Microsemi Corporation JANTX2N3635 applications of single BJT transistors.