2N5014 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N5014 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Polarity/Channel Type
NPN
Transistor Type
NPN
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 20mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Current - Collector (Ic) (Max)
200mA
Collector Base Voltage (VCBO)
900V
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2N5014 Product Details
2N5014 Overview
This device has a DC current gain of 30 @ 20mA 10V, which is the ratio between the base current and the collector current.Collector current can be as low as 200mA volts at its maximum.
2N5014 Features
the DC current gain for this device is 30 @ 20mA 10V
2N5014 Applications
There are a lot of Microsemi Corporation 2N5014 applications of single BJT transistors.