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2N5152

2N5152

2N5152

Microsemi Corporation

2N5152 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N5152 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Through Hole
Package / Case TO-39
Number of Pins 3
Packaging Bulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Number of Elements 1
Polarity NPN
Configuration SINGLE
Power Dissipation 1W
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 2A
JEDEC-95 Code TO-5
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5.5V
DC Current Gain-Min (hFE) 30
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $30.89060 $3089.06
2N5152 Product Details

2N5152 Overview


Keeping the emitter base voltage at 5.5V allows for a high level of efficiency.A maximum collector current of 2A volts can be achieved.

2N5152 Features


the emitter base voltage is kept at 5.5V

2N5152 Applications


There are a lot of Microsemi Corporation 2N5152 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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