2SC4487S-AN Overview

This device has a DC current gain of 140 @ 100mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 350mV, it offers maximum design flexibility.When VCE saturation is 500mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Breakdown input voltage is 50V volts.During maximum operation, collector current can be as low as 3A volts.

2SC4487S-AN Features

the DC current gain for this device is 140 @ 100mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V

2SC4487S-AN Applications

There are a lot of ON Semiconductor 2SC4487S-AN applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver