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2N5415S

2N5415S

2N5415S

Microsemi Corporation

2N5415S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N5415S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 2 weeks ago)
Contact Plating Lead, Tin
Mount Through Hole
Package / Case TO-39
Number of Pins 3
Published 2005
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory Other Transistors
Max Power Dissipation 750mW
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Polarity PNP
Configuration SINGLE
Power Dissipation 750mW
Transistor Application AMPLIFIER
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 1A
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) 6V
DC Current Gain-Min (hFE) 30
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $30.37630 $3037.63
2N5415S Product Details

2N5415S Overview


If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Maximum collector currents can be below 1A volts.

2N5415S Features


the emitter base voltage is kept at 6V

2N5415S Applications


There are a lot of Microsemi Corporation 2N5415S applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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