2N5666 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N5666 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Lead, Tin
Mount
Through Hole
Package / Case
TO-5
Number of Pins
3
Packaging
Bulk
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Subcategory
Other Transistors
Max Power Dissipation
1.2W
Terminal Position
BOTTOM
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Polarity
NPN
Configuration
SINGLE
Power Dissipation
1.2W
Transistor Application
SWITCHING
Collector Emitter Voltage (VCEO)
200V
Max Collector Current
5A
Transition Frequency
20MHz
Collector Base Voltage (VCBO)
250V
Emitter Base Voltage (VEBO)
6V
DC Current Gain-Min (hFE)
5
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$39.40650
$3940.65
2N5666 Product Details
2N5666 Overview
An emitter's base voltage can be kept at 6V to gain high efficiency.A transition frequency of 20MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
2N5666 Features
the emitter base voltage is kept at 6V a transition frequency of 20MHz
2N5666 Applications
There are a lot of Microsemi Corporation 2N5666 applications of single BJT transistors.