2N6788

new-10%

Manufacturer part number:2N6788

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 100V TO-205AF

Case Package:SOT-23

Datasheet:2N6788 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-205AF Metal Can
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN LEAD
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	WIRE
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	800mW Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	40 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	300m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V
Rise Time	70ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	70 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6A
Pulsed Drain Current-Max (IDM)	24A
DS Breakdown Voltage-Min	100V
Radiation Hardening	No
RoHS Status	Non-RoHS Compliant