APL502B2G

new-10%

Manufacturer part number:APL502B2G

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 500V 58A T-MAX

Case Package:SOT-23

Datasheet:APL502B2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Contact Plating	Gold, Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
JESD-609 Code	e1
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	58A
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	730W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	730W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	90m Ω @ 29A, 12V
Vgs(th) (Max) @ Id	4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	9000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	58A Tc
Rise Time	27ns
Drive Voltage (Max Rds On,Min Rds On)	15V
Vgs (Max)	±30V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	56 ns
Continuous Drain Current (ID)	58A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.09Ohm
Drain to Source Breakdown Voltage	500V
Height	5.31mm
Length	21.46mm
Width	16.26mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free