AUIRL1404S

new-10%

AUIRL1404S

Manufacturer part number:AUIRL1404S

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 40V 160A D2PAK

Case Package:SOT-23

Datasheet:AUIRL1404S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.8W Ta 200W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.8W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4m Ω @ 95A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	160A Tc
Gate Charge (Qg) (Max) @ Vgs	140nC @ 5V
Rise Time	270ns
Drive Voltage (Max Rds On,Min Rds On)	4.3V 10V
Vgs (Max)	±20V
Fall Time (Typ)	130 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	160A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.004Ohm
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	640A
Avalanche Energy Rating (Eas)	520 mJ
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant