APT1001RBN

new-10%

Manufacturer part number:APT1001RBN

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) TO-247

Case Package:SOT-23

Datasheet:APT1001RBN Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	POWER MOS IV®
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	310W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	310W
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1 Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2950pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	11A
JEDEC-95 Code	TO-247AD
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	1Ohm
Pulsed Drain Current-Max (IDM)	44A
RoHS Status	Non-RoHS Compliant