IRF610

new-10%

Manufacturer part number:IRF610

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 200V 3.3A TO-220AB

Case Package:SOT-23

Datasheet:IRF610 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220AB
Weight	6.000006g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Current Rating	3.3A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	36W Tc
Element Configuration	Single
Power Dissipation	3W
Turn On Delay Time	8.2 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 25V
Current - Continuous Drain (Id) @ 25°C	3.3A Tc
Gate Charge (Qg) (Max) @ Vgs	8.2nC @ 10V
Rise Time	17ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8.9 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	3.3A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Input Capacitance	140pF
Drain to Source Resistance	1.5Ohm
Rds On Max	1.5 Ω
Nominal Vgs	4 V
Height	9.01mm
Length	10.41mm
Width	4.7mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead